Electron Tomography of Microelectronic Device Interconnects

Testing Power and Microelectronic Interconnects

Inequalities in thermomechanical properties of materials at interfaces of a modern package lead to a rise in periodic stresses during normal operation, making these sites crucial to the integrity of the entire product. Proper lifetime analysis for highly miniaturized interconnects is a real challenge. In addition, broad application of 100% quality standards in various industries has caused a ra...

Testing Power and Microelectronic Interconnects

Inequalities in thermomechanical properties of materials at interfaces of a modern package lead to a rise in periodic stresses during normal operation, making these sites crucial to the integrity of the entire product. Proper lifetime analysis for highly miniaturized interconnects is a real challenge. In addition, broad application of 100% quality standards in various industries has caused a ra...

Electromigration of Intergranular Voids in Metal Films for Microelectronic Interconnects

Voids and cracks often occur in the interconnect lines of microelec tronic devices They increase the resistance of the circuits and may even lead to a fatal failure Voids may occur inside a single grain but often they appear on the boundary between two grains In this work we model and analyze numerically the migration and evolution of an intergranular void subjected to surface di usion forces a...

Device Simulation Demands of Upcoming Microelectronic Devices

Numerical device simulation plays a vital role in the development of advanced integrated devices. Technology CAD device simulators currently employ current transport models which are semiclassical in nature, extended by quantum correction models and tunneling models. Semi-classical transport in semiconductor devices is well understood, especially through the availability of Monte Carlo simulati...

Toward atom probe tomography of microelectronic devices